Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 'm laser pulse

Minghe Wu; Xiaoming Zheng; Chengli Ruan; Hongchun Yang; Yunqing Sun; Shan Wang; Kedi Zhang; Hong Liu

doi:10.1063/1.3172668

Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 'm laser pulse

Minghe Wu, Xiaoming Zheng, Chengli Ruan, Hongchun Yang, Yunqing Sun, Shan Wang, Kedi Zhang, Hong Liu

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Abstract

The ShockleyÃ¯'Â½ReadÃ¯'Â½Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064Ã¯'Â½Ã¯'Â½m laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064Ã¯'Â½Ã¯'Â½m. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.

Original language	English
Pages (from-to)	023101-023101
Number of pages	1
Journal	Journal of Applied Physics
Volume	106
Issue number	2
DOIs	https://doi.org/10.1063/1.3172668
Publication status	Published - 2009

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title = "Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 'm laser pulse",

abstract = "The Shockley{\~A}¯'{\^A}½Read{\~A}¯'{\^A}½Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064{\~A}¯'{\^A}½{\~A}¯'{\^A}½m laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064{\~A}¯'{\^A}½{\~A}¯'{\^A}½m. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.",

keywords = "Open access version available, 064 nm lasers, Deep donor, EL2 centers, Electric pulse, Electron excitations, Experimental measurements, Free carrier density, GaAs, Gallium arsenide, Low voltages, Micro mechanisms, Output pulse, Photoconductive semiconductor switches, Photoresistance, SI-GaAs, Semi-insulating, Semi-insulating GaAs, Shockley-Read-Hall models, Simplified models, Subband-gap, Switch-on, Theoretical modeling, Time evolutions",

author = "Minghe Wu and Xiaoming Zheng and Chengli Ruan and Hongchun Yang and Yunqing Sun and Shan Wang and Kedi Zhang and Hong Liu",

note = "Imported on 12 Apr 2017 - DigiTool details were: Journal title (773t) = Journal of Applied Physics. ISSNs: 0021-8979; ",

year = "2009",

doi = "10.1063/1.3172668",

language = "English",

volume = "106",

pages = "023101--023101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 'm laser pulse

AU - Wu, Minghe

AU - Zheng, Xiaoming

AU - Ruan, Chengli

AU - Yang, Hongchun

AU - Sun, Yunqing

AU - Wang, Shan

AU - Zhang, Kedi

AU - Liu, Hong

N1 - Imported on 12 Apr 2017 - DigiTool details were: Journal title (773t) = Journal of Applied Physics. ISSNs: 0021-8979;

PY - 2009

Y1 - 2009

N2 - The ShockleyÃ¯'Â½ReadÃ¯'Â½Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064Ã¯'Â½Ã¯'Â½m laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064Ã¯'Â½Ã¯'Â½m. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.

AB - The ShockleyÃ¯'Â½ReadÃ¯'Â½Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064Ã¯'Â½Ã¯'Â½m laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064Ã¯'Â½Ã¯'Â½m. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.

KW - Open access version available

KW - 064 nm lasers

KW - Deep donor

KW - EL2 centers

KW - Electric pulse

KW - Electron excitations

KW - Experimental measurements

KW - Free carrier density

KW - GaAs

KW - Gallium arsenide

KW - Low voltages

KW - Micro mechanisms

KW - Output pulse

KW - Photoconductive semiconductor switches

KW - Photoresistance

KW - SI-GaAs

KW - Semi-insulating

KW - Semi-insulating GaAs

KW - Shockley-Read-Hall models

KW - Simplified models

KW - Subband-gap

KW - Switch-on

KW - Theoretical modeling

KW - Time evolutions

U2 - 10.1063/1.3172668

DO - 10.1063/1.3172668

M3 - Article

SN - 0021-8979

VL - 106

SP - 23101

EP - 23101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 'm laser pulse

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