The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch

Minghe Wu, Xiaoming Zheng, Chengli Ruan, Hongchun Yang, Yunqing Sun, Shan Wang, Gang Zeng, Hong Liu

Research output: Book chapter/Published conference paperConference paper

1 Citation (Scopus)

Abstract

A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm) and illuminated by a laser at the wavelength of 1.064 micrometer for 1 nanosecond. A pulsed power supply and a Blumlein-like transmission line with a small equivalent capacitance were employed in the new HVNEPG which resulted in high voltage low jitters output pulses and a significantly prolonged lifetime of the PCSS under high electric field. The good agreement between the model simulation and the experimental measurements leads to the conclusion that the PCSS was operated in a linear mode under a higher than critical electric field.
Original languageEnglish
Title of host publicationPEITS 2009
Place of PublicationUSA
PublisherIEEE
Pages136-139
Number of pages4
Volume2
ISBN (Electronic)9781424442461
DOIs
Publication statusPublished - 2009
EventIEEE Conference on Power Electronics and Intelligent Transportation System (PEITS) - Shenzhen, China, China
Duration: 19 Dec 200920 Dec 2009

Conference

ConferenceIEEE Conference on Power Electronics and Intelligent Transportation System (PEITS)
CountryChina
Period19/12/0920/12/09

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  • Cite this

    Wu, M., Zheng, X., Ruan, C., Yang, H., Sun, Y., Wang, S., Zeng, G., & Liu, H. (2009). The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch. In PEITS 2009 (Vol. 2, pp. 136-139). IEEE. https://doi.org/10.1109/PEITS.2009.5406937