The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch

Minghe Wu; Xiaoming Zheng; Chengli Ruan; Hongchun Yang; Yunqing Sun; Shan Wang; Gang Zeng; Hong Liu

doi:10.1109/PEITS.2009.5406937

The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch

Minghe Wu, Xiaoming Zheng, Chengli Ruan, Hongchun Yang, Yunqing Sun, Shan Wang, Gang Zeng, Hong Liu

Research output: Book chapter/Published conference paper › Conference paper › peer-review

1 Citation (Scopus)

Abstract

A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm) and illuminated by a laser at the wavelength of 1.064 micrometer for 1 nanosecond. A pulsed power supply and a Blumlein-like transmission line with a small equivalent capacitance were employed in the new HVNEPG which resulted in high voltage low jitters output pulses and a significantly prolonged lifetime of the PCSS under high electric field. The good agreement between the model simulation and the experimental measurements leads to the conclusion that the PCSS was operated in a linear mode under a higher than critical electric field.

Original language	English
Title of host publication	PEITS 2009
Place of Publication	USA
Publisher	IEEE
Pages	136-139
Number of pages	4
Volume	2
ISBN (Electronic)	9781424442461
DOIs	https://doi.org/10.1109/PEITS.2009.5406937
Publication status	Published - 2009
Event	IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS) - Shenzhen, China, China Duration: 19 Dec 2009 → 20 Dec 2009

Conference

Conference	IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS)
Country/Territory	China
Period	19/12/09 → 20/12/09

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10.1109/PEITS.2009.5406937

Cite this

@inproceedings{cdddbdd1ff164b35aaa9b8598ea931cc,

title = "The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch",

abstract = "A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm) and illuminated by a laser at the wavelength of 1.064 micrometer for 1 nanosecond. A pulsed power supply and a Blumlein-like transmission line with a small equivalent capacitance were employed in the new HVNEPG which resulted in high voltage low jitters output pulses and a significantly prolonged lifetime of the PCSS under high electric field. The good agreement between the model simulation and the experimental measurements leads to the conclusion that the PCSS was operated in a linear mode under a higher than critical electric field.",

keywords = "Blumlein, Critical electric field, Electrical pulse, Equivalent capacitance, Experimental measurements, External electric field, Gas, High electric fields, High voltage, Linear modes, Low jitters, Model simulation, Nanosecond electric pulse, Output pulse, Photoconductive semiconductor switches, Pulsed power supply, Semi-insulating gallium arsenide, Shockley-Read-Hall models, Simulation algorithms, Transmission line",

author = "Minghe Wu and Xiaoming Zheng and Chengli Ruan and Hongchun Yang and Yunqing Sun and Shan Wang and Gang Zeng and Hong Liu",

note = "Imported on 03 May 2017 - DigiTool details were: publisher = USA: IEEE, 2009. editor/s (773b) = unknown; Event dates (773o) = 19-20 December 2009; Parent title (773t) = IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS).; IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS) ; Conference date: 19-12-2009 Through 20-12-2009",

year = "2009",

doi = "10.1109/PEITS.2009.5406937",

language = "English",

volume = "2",

pages = "136--139",

booktitle = "PEITS 2009",

publisher = "IEEE",

}

TY - GEN

T1 - The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch

AU - Wu, Minghe

AU - Zheng, Xiaoming

AU - Ruan, Chengli

AU - Yang, Hongchun

AU - Sun, Yunqing

AU - Wang, Shan

AU - Zeng, Gang

AU - Liu, Hong

N1 - Imported on 03 May 2017 - DigiTool details were: publisher = USA: IEEE, 2009. editor/s (773b) = unknown; Event dates (773o) = 19-20 December 2009; Parent title (773t) = IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS).

PY - 2009

Y1 - 2009

N2 - A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm) and illuminated by a laser at the wavelength of 1.064 micrometer for 1 nanosecond. A pulsed power supply and a Blumlein-like transmission line with a small equivalent capacitance were employed in the new HVNEPG which resulted in high voltage low jitters output pulses and a significantly prolonged lifetime of the PCSS under high electric field. The good agreement between the model simulation and the experimental measurements leads to the conclusion that the PCSS was operated in a linear mode under a higher than critical electric field.

AB - A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm) and illuminated by a laser at the wavelength of 1.064 micrometer for 1 nanosecond. A pulsed power supply and a Blumlein-like transmission line with a small equivalent capacitance were employed in the new HVNEPG which resulted in high voltage low jitters output pulses and a significantly prolonged lifetime of the PCSS under high electric field. The good agreement between the model simulation and the experimental measurements leads to the conclusion that the PCSS was operated in a linear mode under a higher than critical electric field.

KW - Blumlein

KW - Critical electric field

KW - Electrical pulse

KW - Equivalent capacitance

KW - Experimental measurements

KW - External electric field

KW - Gas

KW - High electric fields

KW - High voltage

KW - Linear modes

KW - Low jitters

KW - Model simulation

KW - Nanosecond electric pulse

KW - Output pulse

KW - Photoconductive semiconductor switches

KW - Pulsed power supply

KW - Semi-insulating gallium arsenide

KW - Shockley-Read-Hall models

KW - Simulation algorithms

KW - Transmission line

U2 - 10.1109/PEITS.2009.5406937

DO - 10.1109/PEITS.2009.5406937

M3 - Conference paper

VL - 2

SP - 136

EP - 139

BT - PEITS 2009

PB - IEEE

CY - USA

T2 - IEEE Conference on Power Electronics and Intelligent Transportation System (PEITS)

Y2 - 19 December 2009 through 20 December 2009

ER -

The high voltage nanosecond electric pulse generator based on a photoconductive semiconductor switch

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